Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors
- 1 December 1986
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 5 (12) , 1281-1284
- https://doi.org/10.1007/bf01729393
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Structural properties of doped n-type amorphous (GeSe3.5)100−x Bi xJournal of Materials Science Letters, 1986
- Physical properties of (GeS2)x(Bi2S3)1−x glassesJournal of Non-Crystalline Solids, 1985
- Pressure-induced structural transformations in Bi-doped amorphous germanium sulfidePhysical Review B, 1985
- Role of dopants in pressure-induced effects in glassy GeSe3·5 containing Bi and SbPhilosophical Magazine Part B, 1985
- Pressure induced effects in bulk amorphous n-type semiconductors (GeSe3.5)100−xBixJournal of Non-Crystalline Solids, 1985
- Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniquesSolid State Communications, 1984
- Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressureJournal of Non-Crystalline Solids, 1983
- Optical gaps from ‘mean’ bond energy in Ge1−x S x and Ge k Sb m S n non-crystalline solidsPhilosophical Magazine Part B, 1982
- Electrical and optical properties of n-type semiconducting chalcogenide glasses in the system Ge-Bi-SeJournal of Applied Physics, 1980
- The effect of charged additives on the carrier concentrations in lone-pair semiconductorsPhilosophical Magazine Part B, 1978