Preferential segregation of dopants in μc-Si:H
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 811-814
- https://doi.org/10.1016/0022-3093(83)90294-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Infrared and far-infrared absorption of B- and P-doped amorphous SiPhysical Review B, 1981
- Infrared absorption and Raman spectra of Li-compensated B-doped SiPhysical Review B, 1981
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Nucleation of Microcrystallites in Phosphorus-Doped Si:H FilmsJapanese Journal of Applied Physics, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Optical determination of mobility and carrier concentration in heavily doped polycrystalline siliconJournal of Applied Physics, 1980
- Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °CApplied Physics Letters, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979