Effect of electron bombardment and annealing on the hyperfine structure in a-Si:H (P)
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 411-413
- https://doi.org/10.1016/0022-3093(89)90601-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Hyperfine interaction for P-related defects in P-doped a-Si:H and a-Si1−xCx:HSolid State Communications, 1988
- Hyperfine interaction in phosphorus-doped amorphous silicon–germanium alloysPhilosophical Magazine Letters, 1988
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- P-related defects in P-doped a-Si:HSolid State Communications, 1985