Hyperfine interaction for P-related defects in P-doped a-Si:H and a-Si1−xCx:H
- 30 September 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (10) , 941-944
- https://doi.org/10.1016/0038-1098(88)90461-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hyperfine interaction in phosphorus-doped amorphous silicon–germanium alloysPhilosophical Magazine Letters, 1988
- 31P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus AlloysJapanese Journal of Applied Physics, 1987
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Energy location of ESR hyperfine centers of P-doped a-Si:HJournal of Non-Crystalline Solids, 1985
- Donor States in Hydrogenated Amorphous Silicon and GermaniumPhysical Review Letters, 1985
- P-related defects in P-doped a-Si:HSolid State Communications, 1985