Thin silicon film p-i-n photodiodes with internal reflection
- 1 February 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (2) , 247-253
- https://doi.org/10.1109/t-ed.1978.19065
Abstract
A new kind of silicon p-i-n photodiode is presented which combines broad wavelength response at high quantum efficiencies (450 to 900 nm ~85 percent) and extremely fast response time (typically below 100 ps). The diodes use internal light reflection. Theoretical expressions for different types of gratings are presented. The fabrication steps for both the different kinds of gratings and the diode itself are given. Experimental data of the time and wavelength response prove this expected excellent behavior.Keywords
This publication has 6 references indexed in Scilit:
- Double‐mesa reach‐through avalanche photodiodes with a large gain‐bandwidth product made from thin silicon filmsJournal of Applied Physics, 1978
- Responsivity of avalanche photodiodes in the presence of multiple reflectionsElectronics Letters, 1976
- Preferentially etched diffraction gratings in siliconJournal of Applied Physics, 1975
- Generation of faultless multi-pinhole masks by means of spatial filteringOptics Communications, 1975
- Multiple-pass thin-film silicon solar cellApplied Physics Letters, 1974
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955