As4 pressure dependence of the interface flatness of quantum wells grown on (411) A GaAs substrates by MBE
- 1 April 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 113-114, 73-78
- https://doi.org/10.1016/s0169-4332(96)00863-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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