Behavior of charged particles in an electron cyclotron resonance plasma chemical vapor deposition reactor

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Abstract
This letter presents the behavior of electrons and ions in an electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) reactor. The reactor consists of an ECR chamber with a hydrogen plasma and a CVD chamber into which a source gas of SiH4is fed. It is found that electrons and ions of H+ extracted from the ECR chamber by a divergent magnetic field move along the magnetolines of force and play respective roles in the production of the film precursor from SiH4 and in the relaxation of the silicon network. The precursor for films on the substrate perpendicular to the magnetic flux is mainly produced on the growing surface.