Dependence on uniaxial stress of deep levels in III-V compound and group-IV elemental semiconductors
- 15 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (11) , 7881-7894
- https://doi.org/10.1103/physrevb.39.7881
Abstract
The uniaxial-stress dependences of substitutional s- and p-bonded deep impurity levels in the semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, Si, and Ge are studied theoretically for stresses applied along the [100], [110], and [111] directions. We find that stress applied along the [110] direction, in particular, causes splittings and shifts of deep levels associated with a point defect that can be used (i) to determine uniquely the symmetries of the levels (s-like or p-like) and (ii) to identify the site (anion or cation) of the associated impurity.Keywords
This publication has 11 references indexed in Scilit:
- Extended x-ray absorption fine-structure studies of semiconductor structureJournal of Vacuum Science & Technology A, 1987
- Pressure dependence of shallow bound states in gallium arsenideSolid State Communications, 1985
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Charge densities and wave functions of chalcogenide deep impurities in SiPhysical Review B, 1982
- Pressure dependence of deep levels in GaAsPhysical Review B, 1982
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977
- Bond-orbital model. IIPhysical Review B, 1974
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954