Solitons and the electrical and mobility properties of dislocations in silicon

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Abstract
The experimental evidence for an explanation of the electrical and mobility properties of dislocations in silicon in terms of solitons (i.e. antiphase defects) associated with strongly reconstructed partials is presented. This paper uses the results of calculations of the electronic properties of two types of defect (the soliton and its vacancy complex) given in an accompanying paper. We suggest that the absence of spin centres in high-temperature-deformed silicon can be interpreted through the soliton being a negative-U Anderson centre. We support this hypothesis with theoretical arguments. These solitons form obvious nucleation points for double kinks and a theory of dislocation velocity is given, starting from this premiss. The expression for the dislocation velocity is formally identical to that of Hirth and Lothe, its doping dependence is the same as that of Hirsch's theory and the calculated effective donor and acceptor levels are in good agreement with observation.

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