Deep levels induced by high-energy boron ion implantation into p-silicon
- 5 October 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (14) , 1682-1684
- https://doi.org/10.1063/1.108450
Abstract
Defects induced by B+ implantation at 0.7 MeV into n+p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3×1013 cm−2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (Ev+0.65 eV) is associated with point defects around dislocation kinks formed by B+ implantation to doses of more than 3×1013 cm−2. Another level at 290 K (Ev+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found in p‐Si after high‐energy ion implantation followed by annealing.Keywords
This publication has 12 references indexed in Scilit:
- Carrier concentration profiles by high-energy boron ion implantation into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion ImplantationJapanese Journal of Applied Physics, 1989
- Electronic defects in silicon induced by MeV carbon and oxygen implantationsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Improvement of CMOS latch-up immunity using a high energy implanted buried layerNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Feasibility of high-energy boron implantation for p-type retrograde well formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Damage nucleation and annealing in MeV ion-implanted SiApplied Physics Letters, 1988
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- MeV-energy B+, P+ and As+ ion implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- A highly latchup-immune 1-µm CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi2IEEE Transactions on Electron Devices, 1986
- High energy ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985