Modeling of transient point defect dynamics in Czochralski silicon crystals
- 1 August 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 230 (1-2) , 291-299
- https://doi.org/10.1016/s0022-0248(01)01319-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fieldsJournal of Crystal Growth, 2001
- Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon CrystalsJournal of the Electrochemical Society, 1998
- Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental resultsJournal of Crystal Growth, 1997
- The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon CrystalsJournal of the Electrochemical Society, 1996
- DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature AnnealingSolid State Phenomena, 1995
- The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growthJournal of Crystal Growth, 1995
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski SiliconJapanese Journal of Applied Physics, 1993
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- The mechanism of swirl defects formation in siliconJournal of Crystal Growth, 1982