In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- 27 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2423-2425
- https://doi.org/10.1063/1.104891
Abstract
Using metalorganic vapor phase epitaxy to grow GaInAs/InP layers on masked InP substrates patterned with submicron square holes, we have fabricated in situ buried quantum dot arrays for the first time. Starting with mask openings ≥150 nm × 150 nm and utilizing the natural crystal habits to form low‐index plane facetted pyramids inside the holes, highly regular GaInAs quantum dots embedded in InP are obtained in a single growth step. As verified by cathodoluminescence, the dots exhibit very high luminescence efficiencies, even at room temperature, owing to the absence of air‐exposed or etch‐damaged heterointerfaces.Keywords
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