Diffusion of Point Defects in Silicon Crystals during Melt-Growth. II -One Diffusor Model-

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Abstract
We introduce the phenomenological equations which describe the diffusion of one species of point defects in silicon single crystals during melt-growth. The chemical potential of point defects frozen into the crystal during CZ crystal growth is estimated, and the formation mechanism of the OSF-ring in CZ crystal is discussed with the equations thus developed. It was shown that the phenomenological diffusion equations can explain well the dependence of the location of the OSF-ring in CZ-crystals on crystal growth rate, and disappearance of the OSF-ring at low growth rate. The OSF-ring is proposed to be generated at the peak of the chemical potential of point defects frozen into the crystal.