Low dark current GaN avalanche photodiodes
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 36 (12) , 1389-1391
- https://doi.org/10.1109/3.892557
Abstract
We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.Keywords
This publication has 13 references indexed in Scilit:
- GaN avalanche photodiodesApplied Physics Letters, 2000
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaNApplied Physics Letters, 1999
- Improved detection of the invisibleIEEE Circuits and Devices Magazine, 1999
- High-speed pin ultraviolet photodetectorsfabricated on GaNElectronics Letters, 1998
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- Low noise p-π-n GaN ultraviolet photodetectorsApplied Physics Letters, 1997
- Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaNJournal of Applied Physics, 1997
- Electric breakdown in GaN p-n junctionsApplied Physics Letters, 1996
- Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Chapter 5 Avalanche PhotodiodesPublished by Elsevier ,1977