Detailed models of the MOVPE process
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 1-11
- https://doi.org/10.1016/0022-0248(91)90428-8
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Transport phenomena in vertical reactors for metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictionsJournal of Crystal Growth, 1990
- Three-dimensional modelling of horizontal chemical vapor depositionJournal of Crystal Growth, 1990
- Transport phenomena and chemical reaction issues in OMVPE of compound semiconductorsJournal of Crystal Growth, 1989
- Hydrodynamic dispersion in rotating-disk omvpe reactors: Numerical simulation and experimental measurementsJournal of Crystal Growth, 1989
- Return flows in horizontal MOCVD reactors studied with the use of TiO2 particle injection and numerical calculationsJournal of Crystal Growth, 1989
- A Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs MocvdMRS Proceedings, 1989
- Elementary processes and rate-limiting factors in MOVPE of GaAsJournal of Crystal Growth, 1988
- Peculiar asymmetric flow pattern in a vertical axisymmetric VPE reactorJournal of Crystal Growth, 1988
- Three‐Dimensional Flow Effects in Silicon CVD in Horizontal ReactorsJournal of the Electrochemical Society, 1988