The regrowth and impurity diffusion processes in the arc annealing of ion-implanted silicon
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 984-987
- https://doi.org/10.1063/1.330578
Abstract
The strong diffusion model has been used to solve the one-dimensional heat conduction equation in the light-flash annealing of ion-implanted silicon. The threshold energy for surface melting, the depth of melting, the recrystallization velocity, and the dopant redistribution at different irradiation energy densities for a pulse duration of 100 μs have been computed. Liquid-phase impurity diffusion has been used for the calculation of dopant distributions after arc annealing.This publication has 14 references indexed in Scilit:
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