Annealing of ion-implanted silicon by an incoherent light pulse
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11) , 955-957
- https://doi.org/10.1063/1.90232
Abstract
Annealing of boron‐implanted silicon by a single 15‐μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.Keywords
This publication has 4 references indexed in Scilit:
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- A laser-scanning apparatus for annealing of ion-implantation damage in semiconductorsApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978