Laser annealing for solid-phase thin-film reactions

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Abstract
We propose a scheme for calculating the amount of thin‐film reaction as a result of the pulsed annealing induced by laser irradiation. Under ideal conditions, simple analytical solutions are obtained for reaction temperature T (t) if the absorbed laser power P (t) is a step, linear, or polynomial function of t. The thickness of the reacted film is equivalent to that of a thermal (furnace) annealing at an effective temperature Teff for an effective annealing time Δteff. Teff is the peak value of T (t) and Δteff ≃ (kTeff/Ea)mΔt, where m=1 or 1/2 [determined by the function form of T (t) near Teff], Ea is the activation energy of the process, and Δt is the duration of the laser pulse. The present results can also be used as an approximation in some cases of the laser annealing of ion‐implanted semiconductors. Effect of antireflective coatings is thus predicted. Preliminary experimental results on the laser annealing for metal‐silicide formation are discussed and are compared with the present calculation.