The influence of addition elements on the early resistance changes observed during electromigration testing of Al metal lines
- 1 February 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (1) , 87-98
- https://doi.org/10.1016/s0026-2714(97)00064-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometryMicroelectronics Reliability, 1996
- Stress voiding and electromigration phenomena in aluminum alloysApplied Surface Science, 1995
- An activation energy study of the microstructural changes in Al-1%Si interconnectsJournal of Applied Physics, 1994
- A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structuresJournal of Materials Research, 1991
- A resistometric method to characterize electromigration at the wafer levelMicroelectronics Reliability, 1990
- Effects of substrate temperature on copper distribution, resistivity, and microstructure in magnetron-sputtered Al-Cu filmsThin Solid Films, 1987
- Activation energy spectra and relaxation in amorphous materialsJournal of Materials Science, 1983
- Diffusion-limited Si precipitation in evaporated Al/Si filmsJournal of Applied Physics, 1973
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958