Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7A) , L806
- https://doi.org/10.1143/jjap.37.l806
Abstract
We studied the interaction between hydrogen and point defects generated by electron irradiation of Si by means of optical absorption measurement. Specimens were prepared from n-type Si crystals. Those specimens were doped with hydrogen by annealing in a hydrogen atmosphere at 1200°C followed by quenching and were subsequently irradiated with 3 MV electrons at room temperature. We observed their optical absorption spectra at about 6 K with a resolution of 0.25 cm-1. Many optical absorption peaks were observed in electron-irradiated specimens. Most of those peaks disappeared at around 300°C due to isochronal annealing. On the other hand, new optical absorption lines appeared at 2223 cm-1 and 2166 cm-1 after annealing at high temperature, namely above 150°C. The former is known to be due to a complex of one self-interstitial atom and 4 hydrogen atoms. We propose that the 2166 cm-1 peak is due to a complex of one self-interstitial atom and three hydrogen atoms. These results clearly show that complexes of self-interstitials exist after electron-irradiation of Si and they dissociate above 150°C.Keywords
This publication has 11 references indexed in Scilit:
- Formation Energy of Interstitial Si in Au-Doped Si Determined by Optical Absorption Measurements of H Bound to Interstitial SiJapanese Journal of Applied Physics, 1998
- Hydrogen-related center with tetrahedral symmetry in ion-implanted siliconPhysical Review B, 1989
- In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen AtmosphereMaterials Science Forum, 1986
- The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphereSolid State Communications, 1985
- The Nature of Two Intense Si–H IR Stretching Bands in FZ‐Si:HPhysica Status Solidi (b), 1985
- New infra-red absorption bands in hydrogen-implanted siliconPhysics Letters A, 1979
- Infrared absorption of silicon irradiated by protonsPhysica Status Solidi (b), 1978
- Defects in electron-irradiated germaniumPhilosophical Magazine, 1976
- The nature of rod-like defects observed in boron irradiated siliconRadiation Effects, 1972
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966