The Effect of Hydrogen Dilution on Hot-Wire Thin-Film Transistors

This publication has 18 references indexed in Scilit:

• Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500°C
  Philosophical Magazine Part B, 1997
• Near-Intrinsic Microcrystalline Silicon for Use in Thin Film Transistors
  MRS Proceedings, 1997
• A high-performance thin-film transistor with a vertical offset structure
  IEEE Electron Device Letters, 1996
• Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
  Japanese Journal of Applied Physics, 1996
• Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors
  Japanese Journal of Applied Physics, 1995
• Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
  Applied Physics A, 1994
• Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon
  Japanese Journal of Applied Physics, 1994
• Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method
  Japanese Journal of Applied Physics, 1991
• Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias
  Philosophical Magazine Part B, 1987
• Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
  Journal of Non-Crystalline Solids, 1983