Self-assembling of Ge on finite Si(001) areas comparable with the island size
- 19 May 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (20) , 3517-3519
- https://doi.org/10.1063/1.1576498
Abstract
Voids in ultrathin oxide and electron-beam lithography-patterned windows were used to depositGe selectively. The number of islands is a function of the total amount of Gedeposited in a void or window. Our results show that islands smaller than the void/window size nucleate mainly near the periphery. This might be due to the tensile strain in the Si substrate near the oxide edge. The interruption of the wetting layer reduces the loss of excitons by lateral diffusion, resulting in considerable increase in optical emission from islands.Keywords
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