Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film

This publication has 12 references indexed in Scilit:

• Pyramidal Si nanocrystals with a quasiequilibrium shape selectively grown on Si(001) windows in ultrathinSiO2films
  Physical Review B, 2000
• Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
  Applied Physics Letters, 1999
• Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy
  Applied Physics Letters, 1998
• Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
• Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces
  Journal of Applied Physics, 1998
• Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
  Applied Physics Letters, 1998
• Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
  Surface Science, 1997
• Lithographic positioning of self-assembled Ge islands on Si(001)
  Applied Physics Letters, 1997
• Nucleation along step edges during Si epitaxial growth on the Si(111) surface observed by STM
  Surface Science, 1997
• Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
  Physical Review Letters, 1990