Heterostructure laser-transistors controlled by resonant-tunnelling electron extraction

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Abstract
Three-terminal laser-transistors with a quantum well active region and a resonant-tunnelling collector are proposed and considered. It is shown that the laser-transistor is controlled by the collector voltage due to electron extraction via the resonant-tunnelling structure. The current - voltage and light - voltage characteristics are calculated. Both of them reflect effective voltage control and possible bistable behaviour of the laser-transistor in a certain range of the collector voltage. The electron heating due to electron injection and extraction can significantly affect the controllability and bistability of the laser-transistor.