Light-induced oscillating reactions of silicon in ammonium fluoride solutions: Part 1. Simultaneous photocurrent and excess microwave reflectivity measurements
- 10 June 1992
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry
- Vol. 327 (1-2) , 85-92
- https://doi.org/10.1016/0022-0728(92)80138-t
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivationPhysical Review Letters, 1990
- An S/XPS study of hydrogen terminated, ordered silicon (100) and (111) surfaces prepared by chemical etchingPhysica Scripta, 1990
- X-ray photoemission spectroscopy analysis of Si(111) under photocurrent-doubling conditionsPhysical Review B, 1990
- Photoelectrochemically synthesised interfacial oxides on silicon: composition and electronic propertiesElectrochimica Acta, 1989
- Deconvolution of Charge Injection Steps in Quantum Yield Multiplication on SiliconPhysical Review Letters, 1988
- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988
- The electrochemical behaviour of n‐type silicon (111)‐surfaces in fluoride containing aqueous electrolytesBerichte der Bunsengesellschaft für physikalische Chemie, 1987
- Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy resultsJournal of Applied Physics, 1986
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the darkJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983