Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2) , 281-288
- https://doi.org/10.1109/16.19927
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAsJournal of Applied Physics, 1987
- Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET materialElectronics Letters, 1987
- Ohmic contact control in modulation-doped gallium arsenide field-effect transistorsApplied Physics Letters, 1986
- High-performance AlGaAs/GaAs MODFET'S with improved ohmic contactsIEEE Transactions on Electron Devices, 1986
- Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparisonJournal of Vacuum Science & Technology B, 1986
- Millimeter-wave low-noise high electron mobility transistorsIEEE Electron Device Letters, 1985
- Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structuresJournal of Applied Physics, 1985
- Power performance of microwave high-electron mobility transistorsIEEE Electron Device Letters, 1985
- The Structure and Electrical Properties of Au Contacts to GaAsMRS Proceedings, 1985
- Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsJournal of Applied Physics, 1983