Ohmic contact control in modulation-doped gallium arsenide field-effect transistors
- 27 October 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17) , 1077-1079
- https://doi.org/10.1063/1.97480
Abstract
Modulation‐doped field‐effect transistor structures grown by molecular beam epitaxy were excimer laser annealed at a wavelength of 248 nm and energy density of 75–160 mJ/cm2. A transconductance of over 100 mS/mm was obtained. Source resistance was minimized at 0.8–1.0 Ω mm. The energy density threshold for interdiffusion is 90 mJ/cm2.Keywords
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