Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering
- 15 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 983-986
- https://doi.org/10.1063/1.336145
Abstract
Undoped, phosphorus-, and boron-doped microcrystalline silicon films were prepared by rf reactive sputtering, and their properties were investigated through structural, optical, and transport measurements. The merits of microcrystalline films for the p and n contacts in photovoltaic devices were demonstrated through the fabrication of single and tandem p-i-n solar-cell structures with best efficiencies between 5 and 6%.This publication has 17 references indexed in Scilit:
- Structural Studies of Microcrystalline Silicon Films Produced by SputteringMRS Proceedings, 1984
- Microstructures and Hydrogen Bonding Environments of a-Si: H Films Prepared by RF Sputtering in Pure HydrogenJapanese Journal of Applied Physics, 1983
- Studies of thin-film growth of sputtered hydrogenated amorphous siliconSolar Energy Materials, 1982
- Microcrystalline Si: H Film and Its Application to Solar CellsJapanese Journal of Applied Physics, 1982
- Hydrogenated crystalline silicon fabricated at low-substrate temperatures by reactive sputtering in He-H2 atmosphereSolid State Communications, 1981
- Lattice dilatation of small silicon crystallites - implications for amorphous siliconSolid State Communications, 1981
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- A New Technique of Boron Doping in Si:H FilmsJapanese Journal of Applied Physics, 1981
- Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °CApplied Physics Letters, 1980
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955