Determination of the microscopic prefactor of the conductivity of a-Si:H using temperature dependent field-effect measurements
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 543-546
- https://doi.org/10.1016/0022-3093(87)90127-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- The determination of characteristic parameters by the temperature dependent field-effect in a-Si:H thin film transistorsJournal of Non-Crystalline Solids, 1985
- The role of interface states in the evaluation of density of states from field effect measurements in dc-sputtered a-Si:HJournal of Non-Crystalline Solids, 1985
- The pre-exponential factor in the conductivity of amorphous siliconPhilosophical Magazine Part B, 1985
- A Simple Scheme for Evaluating Field Effect DataPhysica Status Solidi (b), 1980
- A new approach to the interpretation of transport results in a-SiPhilosophical Magazine Part B, 1980