Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature
- 11 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (20) , 2830-2833
- https://doi.org/10.1103/physrevlett.67.2830
Abstract
We have measured the evolution with temperature of the structure of vicinal Si(001) from double- to single-atomic-height steps using high-resolution low-energy electron diffraction. The observed temperature dependence is qualitatively explained with a model that describes this system in analogy with mixing equilibrium between two states, of which one is n-fold degenerate.Keywords
This publication has 14 references indexed in Scilit:
- Terrace-width-induced domain transition on vicinal Si(100) studied with microprobe diffractionPhysical Review Letters, 1991
- Direct determination of step and kink energies on vicinal Si(001)Physical Review Letters, 1990
- Finite-temperature phase diagram of vicinal Si(100) surfacesPhysical Review Letters, 1990
- Scanning tunneling microscopy studies of structural disorder and steps on Si surfacesJournal of Vacuum Science & Technology A, 1989
- Si(100) Surface under an Externally Applied StressPhysical Review Letters, 1988
- Spontaneous Formation of Stress Domains on Crystal SurfacesPhysical Review Letters, 1988
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Atomic steps on Si(100) surfacesJournal of Vacuum Science & Technology A, 1987
- Biatomic Layer-High Steps on Si(001)2×1 SurfaceJapanese Journal of Applied Physics, 1987
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980