1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor
- 1 February 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (2) , 58-60
- https://doi.org/10.1109/55.386028
Abstract
The first characterization of the low-frequency noise in a self-aligned Si/SiGe heterojunction bipolar transistor (HBT) is reported. The observed low-frequency noise exhibits a pure 1/f shape, probably related to carrier number fluctuations at the pseudomorphic emitter-base heterointerface.Keywords
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