Interplay of beryllium segregation and diffusion in heavily doped GaAs and AlGaAs grown by molecular beam epitaxy (thermodynamic analysis)
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 661-669
- https://doi.org/10.1016/0022-0248(91)90246-2
Abstract
No abstract availableKeywords
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