Influence of implanted dose on the recrystallization of Si amorphous layer

15 February 1975

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 26 (4) , 154-155
https://doi.org/10.1063/1.88123

Abstract

The channeling effect technique has been used to investigate the annealing of the ’’amorphous’’ layer produced in Si by 40−keV Pb implants with fluences ranging between 5×10¹³ and 5×10¹⁵ ions/cm². The amount of residual disorder, after an anneal of 30 min at 650 °C, shows a dose dependence and increases strongly with Pb fluence, thus indicating the influence of the dissolved lead atoms in the recrystallization process.

Keywords

This publication has 6 references indexed in Scilit:

Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations
Applied Physics Letters, 1973
Ionization, thermal, and flux dependences of implantation disorder in silicon
Radiation Effects, 1971
Ion implantation-lattice disorder
Radiation Effects, 1971
Temperature and Energy Dependence of Proton Dechanneling in Silicon
Physical Review B, 1971
LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge
Applied Physics Letters, 1968
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
Canadian Journal of Physics, 1968