A Soft Error Rate Model for MOS Dynamic RAM's
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (2) , 362-367
- https://doi.org/10.1109/jssc.1982.1051742
Abstract
A soft error rate analysis model for MOS dynamic RAM's is presented. The soft error rate can be quantitatively calculated by using a solution of the equations for diffusion and collection of alpha-particle-induced excess electrons and by combining a statistical treatment of alpha particle energy, incidence angles, and incidence positions with the noise charge calculation. The model is then applied to analyze a soft error experiment on 64-kbit dynamic RAM's. It is shown that soft error characteristics with regard to signal charge (critical charge), as well as alpha energy and incidence angle dependencies, can be definitely determined. The model can also be used to predict the location of soft errors in MOS dynamic RAM's.Keywords
This publication has 6 references indexed in Scilit:
- Circuit simulations of alpha-particle-induced soft errors in MOS dynamic RAMsIEEE Journal of Solid-State Circuits, 1981
- Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuitsIEEE Electron Device Letters, 1980
- Alpha‐particle‐induced soft errors in high speed bipolar ramElectronics and Communications in Japan (Part I: Communications), 1980
- Modeling diffusion and collection of charge from ionizing radiation in silicon devicesIEEE Transactions on Electron Devices, 1979
- Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliabilityIEEE Transactions on Electron Devices, 1979
- Alpha-particle-induced soft errors in dynamic memoriesIEEE Transactions on Electron Devices, 1979