Determination of the g values of the ODMR signals in a-Si : H

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Abstract
Recent studies of optically detected magnetic resonance (ODMR) in a-Si : H have provided conflicting interpretations of the principal recombination processes in this material. In all cases the identification of the ODMR signals has rested on a comparison of the ODMR signal g values and those from the reported ESR and light-induced ESR (LESR) measurements in the literature. The present controversy arises because of the diverse g values reported for the ODMR signals. The problem of measuring the g values associated with the ODMR signals in a-Si : H is discussed, and it is shown how most of the present discrepancies among the various reports can be resolved by experimental considerations. Finally, the implications of this study for the various recombination models deduced from the ODMR results are mentioned.