Effects of Uniaxial Stress on the Luminescence Lines Due to Multiexciton Complexes Bound to Phosphorus in Silicon
- 18 September 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 41 (12) , 808-812
- https://doi.org/10.1103/physrevlett.41.808
Abstract
We report the results of high-resolution studies of the effect of uniaxial stress on the bound-multiexciton-complex luminescence lines in phosphorus-doped silicon. Our results differ significantly from those contained in two previous studies which attempted to rule out the bound-multiexciton-complex explanation of these lines, and instead strongly support Kirczenow's shell model of the structure of the bound-multiexciton complexes. In addition, new lines are observed which are interpreted as stress-induced two-electron transitions of the bound exciton.Keywords
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