Systematic Low Temperature Silicon Bonding using Pressure and Temperature
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3R) , 737-741
- https://doi.org/10.1143/jjap.37.737
Abstract
We have developed a systematic three-step process to low temperature direct bond silicon and/or SiO2 surfaces. The process activates the surface with ammonia, argon and oxygen plasma. While these activation processes allow a very strong low temperature bond to be created, they require techniques distinctly different from those found in previous work for reproducible results. The plasma processes do not result in a bond that propagates as a wave resulting from a point source initiation. A substantial pressure is required to initiate the bond. We have found that a three-step process using pressure and temperature results in very strong, reproducible bonds.Keywords
This publication has 10 references indexed in Scilit:
- Surface activated bonding of silicon wafers at room temperatureApplied Physics Letters, 1996
- Low temperature direct bonding of non-hydrophilicsurfacesElectronics Letters, 1994
- Low temperature Si3N4 direct bondingApplied Physics Letters, 1993
- Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation methodActa Metallurgica et Materialia, 1992
- Low-temperature silicon wafer bondingSensors and Actuators A: Physical, 1992
- Silicon Wafer Bonding Mechanism for Silicon-on-Insulator StructuresJapanese Journal of Applied Physics, 1990
- Surface Impurities Encapsulated by Silicon Wafer BondingJapanese Journal of Applied Physics, 1990
- Interface charge control of directly bonded silicon structuresJournal of Applied Physics, 1989
- Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom EnvironmentJapanese Journal of Applied Physics, 1988
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988