Ultra-low-noise fully ion-implanted GaAs-MESFET with Au/WSiN refractory metal gate
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 251-254
- https://doi.org/10.1109/iedm.1991.235455
Abstract
A fully ion-implanted n/sup +/ self-aligned GaAs-MESFET with Au/WSiN refractory gate is developed. The MESFETs with 0.35- mu m gate length demonstrate a maximum cutoff frequency of 76 GHz and even under the low-noise condition realize a cutoff frequency over 60 GHz. A minimum noise figure of 0.81 dB with an associated gain of 7.7 dB has been obtained at 18 GHz. The K/sub f/ factor was estimated to be 1.4, according to the Fukui noise figure equation and the fitted equivalent circuit. This is the lowest noise figure ever reported for a GaAs-MESFET, and is comparable to those for AlGaAs/GaAs HEMTs (high electron mobility transistors) of the same geometry.Keywords
This publication has 10 references indexed in Scilit:
- Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Super low-noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Pulse-doped GaAs MESFETs with planar self-aligned gate for MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultrahigh-speed HEMT LSI technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETsIEEE Transactions on Electron Devices, 1991
- Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHzIEEE Electron Device Letters, 1989
- Reactively sputtered WSiN film suppresses As and Ga outdiffusionJournal of Vacuum Science & Technology B, 1988
- A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gateIEEE Electron Device Letters, 1988
- Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layerApplied Physics Letters, 1987
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979