Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Optical and electronic properties of microcrystalline silicon as a function of microcrystallinityJournal of Applied Physics, 2000
- A combinatorial study of materials in transition from amorphous to microcrystalline siliconSolid State Communications, 1999
- Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVDMRS Proceedings, 1999
- Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVDMRS Proceedings, 1999
- Charge Transport in the Transition From Hydrogenated Amorphous Silicon to Microcrystalline SiliconMRS Proceedings, 1999
- Amorphous Silicon Alloy Materials and Solar Cells Near the Threshold of MicrocrystallinityMRS Proceedings, 1999
- Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometryApplied Physics Letters, 1998
- H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-LayersMRS Proceedings, 1998
- Effect of Excitation Frequency on the Performance of Amorphous Silicon Alloy Solar CellsMRS Proceedings, 1998
- Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboronJournal of Vacuum Science & Technology A, 1997