Calculated transport properties of ultrasubmicrometer quasi-one-dimensional inversion lines

15 June 1987

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 35 (18) , 9875-9878
https://doi.org/10.1103/physrevb.35.9875

Abstract

We calculate low-temperature dc transport properties of a quasi-one-dimensional electron system as occurring, for example, in ultranarrow inversion layers. Density of states and conductivity are theoretically calculated in realistic structures as a function of the chemical potential. As the chemical potential sweeps through quantized one-dimensional subband states, well-defined oscillatory structure is seen in the density of states and in the conductivity provided the level broadening and temperature are low. Detailed numerical results and a qualitative comparison with existing experimental data are given.

Keywords

This publication has 18 references indexed in Scilit:

Hopping Magnetoconduction and the Random Structure in Quasi One-Dimensional Inversion Layers
Physical Review Letters, 1986
Quasi One-Dimensional Conduction in Multiple, Parallel Inversion Lines
Physical Review Letters, 1986
Hopping conduction in quasi-one-dimensional systems
Surface Science, 1986
Origin of the Peaked Structure in the Conductance of One-Dimensional Silicon Accumulation Layers
Physical Review Letters, 1985
Effect of Inelastic Processes on Resonant Tunneling in One Dimension
Physical Review Letters, 1985
Variable-Range Hopping in Finite One-Dimensional Wires
Physical Review Letters, 1984
Nonmonotonic Variations of the Conductance with Electron Density in ∼70-nm-Wide Inversion Layers
Physical Review Letters, 1984
Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion Layers
Physical Review Letters, 1982
One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers
Physical Review Letters, 1982
Conductance in Restricted-Dimensionality Accumulation Layers
Physical Review Letters, 1982