Abstract
Relations are presented for calculating electron and light‐hole energy levels in quantum wells on the basis of knowledge of the electron and light‐hole effective masses, the lattice constant, and the width of the well. The electron and light‐hole band nonparabolicity of semiconductors forming the well is accounted for. The nonparabolicity of the heavy‐hole band is neglected. The calculated values of En − LHn and En − HHn transition energies are in good agreement with recently published experimental data for various AlxGa1−xAs‐GaAs, Ga0.51In0.49P‐GaAs, and In0.53Ga0.47As‐InP quantum wells.