Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
- 26 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1034-1036
- https://doi.org/10.1063/1.106336
Abstract
Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements.Keywords
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