Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
- 1 February 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (2) , 103-107
- https://doi.org/10.1088/0268-1242/6/2/006
Abstract
The authors report the fabrication of n-type GaInP/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional gas field-effect transistors grown by low-pressure metallorganic chemical vapour deposition on GaAs semi-insulating substrates. The GaAs-GaInP devices demonstrate excellent operational performance at low temperature, due to the absence of deep traps in doped GaInP layers. The extrinsic transconductance is 163 mS mm-1 at 300 K and 213 mS mm-1 at 77 K. The threshold voltage of the devices biased in the dark at Vds=3 V was -3.34 V at 300 K and -3.38 at 77 K. Microwave measurements revealed cut-off frequencies fT of 17.8 GHz and fMAX of 23.5 GHz.Keywords
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