1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping
- 1 August 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (3) , 1529-1536
- https://doi.org/10.1063/1.1767984
Abstract
We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between C C and Si H activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrates of different types ( n type and p type) and different doping concentrations, from low-doped ( ∼ 10 14 cm − 3 ) to highly doped ( ∼ 10 19 cm − 3 ) . We show that the monolayers on n -, p -, and p + -silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ∼ 10 − 7 A cm − 2 and high-quality capacitance-voltage characteristics. The monolayers formed on n + -type silicon are more disordered and therefore exhibit larger leakage current densities ( > 10 − 4 A cm − 2 ) when embedded in a silicon∕monolayer∕metal junction. The inferior structural and electronic properties obtained with n + -type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.All Related Versions
This publication has 61 references indexed in Scilit:
- Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscopeApplied Physics Letters, 2003
- Fabrication and Characterization of Metal−Molecule−Metal Junctions by Conducting Probe Atomic Force MicroscopyJournal of the American Chemical Society, 2001
- Properties of electronic traps at silicon/1-octadecene interfacesApplied Physics Letters, 2001
- Fully methylated, atomically flat (111) silicon surfaceSurface Science, 2000
- Nano-field effect transistor with an organic self-assembled monolayer as gate insulatorApplied Physics Letters, 1998
- Hydrogen-bonded multilayers of self-assembling silanes: structure elucidation by combined Fourier transform infra-red spectroscopy and X-ray scattering techniquesSupramolecular Science, 1995
- Structure and reactivity of alkylsiloxane monolayers formed by reaction of alkyltrichlorosilanes on silicon substratesLangmuir, 1989
- Characteristic electronic defects at the Si-SiO2 interfaceApplied Physics Letters, 1983
- Vibrational spectra in the CH stretching region and the structure of the polymethylene chainSpectrochimica Acta Part A: Molecular Spectroscopy, 1978
- Vibrational analysis of the n-paraffins—I: Assignments of infrared bands in the spectra of C3H8 through n-C19H40Spectrochimica Acta, 1963