Properties of electronic traps at silicon/1-octadecene interfaces
- 26 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9) , 1288-1290
- https://doi.org/10.1063/1.1351530
Abstract
Silicon surfaces with (111) orientation were hydrogenated in NH4F solution. Alkyl chain monolayers were self-assembled on the hydrogen-terminated silicon (Si–H) surface by the free-radical reaction of 1-octadecene and SiH, activated by ultraviolet (253.7 nm) illumination. Comprehensive electrical characterization of the metal/1-octadecene/silicon structures yielded experimental data on the (silicon–monolayer) interface trap parameters. The admittance data indicated the realization of a true silicon/organic-monolayer interface. The interface trap density obtained, for p-type silicon, was 1.7–3.0×1011/cm2 V over an energy range of 0.22–0.73 eV over the valence band edge. These interface trap densities can be considered remarkably low for a silicon interface formed around room temperature, and are an order of magnitude lower than what was obtained in the case of alkyl chain organic monolayers on naturally oxidized silicon surfaces. The interface trap density was found to be strongly influenced by the silicon doping type and density. This observation suggests that the position of the surface Fermi level has a strong influence on the quality of the octadecene–silicon interface.Keywords
This publication has 8 references indexed in Scilit:
- Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating filmsApplied Physics Letters, 2000
- Nano-field effect transistor with an organic self-assembled monolayer as gate insulatorApplied Physics Letters, 1998
- Underpotential Deposition of Silver onto Gold Substrates Covered with Self-Assembled Monolayers of Alkanethiols To Induce Intervention of the Silver between the Monolayer and the Gold SubstrateLangmuir, 1998
- Organic insulating films of nanometer thicknessesApplied Physics Letters, 1996
- Suppression of Charge Carrier Tunneling through Organic Self-Assembled MonolayersPhysical Review Letters, 1996
- Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated SiliconJournal of the American Chemical Society, 1995
- Potentials and direct current in Si-(20 to 40 Å)SiO2-metal structuresSolid-State Electronics, 1972
- Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate SiSolid-State Electronics, 1972