Free-exciton luminescence fromZnSe1−xTex

Temperature dependences of luminescence for the free exciton and the Te-induced self-trapped exciton in ${\mathrm{ZnSe}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Te}}_{\mathit{x}}$ (x∼0.005) are studied. The intensity of the free-exciton line increases up to 50 K with the temperature and decreases above that temperature, while that of the self-trapped broadband monotonically decreases. This phenomenon is quantitatively analyzed in the framework of a kinetic model and discussed by using a configurational coordinate diagram.