X-ray photoelectron spectroscopy study of chlorine incorporation in thermally grown HCl oxides on silicon
- 1 April 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 114 (3) , 285-290
- https://doi.org/10.1016/0040-6090(84)90125-1
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- Correlations between the electrical and material properties of silicon oxides grown in chlorine-containing ambientsThin Solid Films, 1980
- Phase Separation and Sodium Passivation in Silicon Oxides Grown in HCl / O 2 AmbientsJournal of the Electrochemical Society, 1979
- Chlorine Incorporation in HCl OxidesJournal of the Electrochemical Society, 1979
- On the determination of diffusion lengths by means of angle-lapped P-N junctionsSolid-State Electronics, 1979
- Oxidation of Silicon in the Presence of Chlorine and Chlorine CompoundsJournal of the Electrochemical Society, 1978
- Sodium passivation in HCl oxide films on SiApplied Physics Letters, 1977
- The role of HCl in the passivation of MOS structuresThin Solid Films, 1972
- Electron Binding Energies in Free Atoms*Journal of the Optical Society of America, 1970
- A Method for Determining Sodium Content of Semiconductor Processing MaterialsJournal of the Electrochemical Society, 1968