Capacitance-voltage characteristics of Al/Al2O3/p-GaAs metal-oxide-semiconductor diodes
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 404-406
- https://doi.org/10.1063/1.91959
Abstract
Metal‐oxide‐semiconductor (MOS) diodes were constructed on p‐type GaAs by means of anodic oxidation of aluminum film evaporated on GaAs. By terminating the oxidation precisely at the Al‐GaAs interface, MOS diodes in which the capacitance at low frequency increases in the positive‐bias region were obtained. The interface state density determined by using the Terman method based on 1‐MHz measurement of the C‐V characteristics is on the order of 1010 cm−2 eV−1.Keywords
This publication has 22 references indexed in Scilit:
- Self-terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Thermal Oxidation of GaAs in Arsenic Trioxide VaporJournal of the Electrochemical Society, 1978
- Improved enhancement/depletion GaAs MOSFET using anodic oxide as the gate insulatorIEEE Transactions on Electron Devices, 1978
- Electrical properties of thermal oxides on GaAsElectronics Letters, 1977
- Electrical properties of anodic and pyrolytic dielectrics on gallium arsenideJournal of Vacuum Science and Technology, 1977
- Anodic Oxide on GaAs : Quantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation AnalysisJournal of the Electrochemical Society, 1977
- The Anodization of GaAs and GaP in Aqueous SolutionsJournal of the Electrochemical Society, 1976
- New anodic native oxide of GaAs with improved dielectric and interface propertiesApplied Physics Letters, 1975
- Thermal oxidation of GaAsApplied Physics Letters, 1975
- Oxidation of GaAs1 − x
P
x
Surface by Oxygen Plasma and Properties of Oxide FilmJournal of the Electrochemical Society, 1974