Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
- 9 November 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (20)
- https://doi.org/10.1063/1.2130529
Abstract
Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.This work was supported by the Spanish MCyT under NANOSELF project TIC2002-04096, by CAM project GR/MAT/0726/2004, by the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the Junta de Andalucía\ud (Group Tep-0120). J.M.R. acknowledges support\ud through a Ramón y Cajal grant. TEM measurements were carried out at DME-SCCYT, UCA.Peer revieweKeywords
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