An Expanding Thermal Plasma for Deposition of a-Si:H
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Argon-hydrogen plasma jet investigated by active and passive spectroscopic meansPhysical Review E, 1994
- Recombination of argon in an expanding plasma jetPhysical Review E, 1993
- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High TemperaturesJapanese Journal of Applied Physics, 1992
- Stability of a-Si:H deposited at high temperatures and hydrogen dilution in a remote hydrogen plasma reactorJournal of Non-Crystalline Solids, 1991
- Fast deposition of amorphous hydrogenated carbon films using a supersonically expanding arc plasmaPlasma Chemistry and Plasma Processing, 1990
- Hydrogen Bonding in a-Si:H Prepared by Remote Hydrogen Plasma DepositionMRS Proceedings, 1990
- A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous siliconJournal of Applied Physics, 1988
- Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)Journal of Non-Crystalline Solids, 1987
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- A study of the silane glow discharge deposition by isotopic labellingThin Solid Films, 1981